The heterojunction transistor and the space-charge-limited triode
- 1 February 1965
- journal article
- Published by IOP Publishing in British Journal of Applied Physics
- Vol. 16 (2), 133-136
- https://doi.org/10.1088/0508-3443/16/2/303
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Physical processes in cadmium sulphide space charge limited dielectric diodesBritish Journal of Applied Physics, 1964
- Electrical evaluation of thin film CdS diodes and transistorsSolid-State Electronics, 1963
- Characteristics of the dielectric diode and triode at very high frequenciesSolid-State Electronics, 1963
- The preparation of very flat surfaces of silicon by electropolishingSolid-State Electronics, 1963
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962
- The space-charge-limited dielectric triodeSolid-State Electronics, 1962
- Mechanisms of space-charge-limited current in solidsSolid-State Electronics, 1961