High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
- 30 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (9), 1214-1215
- https://doi.org/10.1063/1.109775
Abstract
In this letter we report the fabrication and dc characterization of a high electron mobility transistor(HEMT) based on a n‐GaN‐Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor depositedheterostructure is dominated by two‐dimensional electron gas at the heterostructureinterface.HEMT devices were fabricated on ion‐implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source‐drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a −6 V gate bias.Keywords
This publication has 7 references indexed in Scilit:
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substratesApplied Physics Letters, 1992
- Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctionsApplied Physics Letters, 1992
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990