Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices
- 17 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20), 2539-2541
- https://doi.org/10.1063/1.109289
Abstract
We report on long‐wavelength intersubband absorption under normal incidence in heavily doped binary‐binary GaSb‐AlSb superlattices. Due to a small energy difference between the ellipsoidal L valleys in GaSb and the low‐density‐of‐states Γ minimum, electrons spill over from the first Γ subband into the higher‐energy L subband in GaSb wells, where they are allowed to make an intersubband transition under normally incident radiation. A peak fractional absorption per quantum well of 6.8×10−3 (absorption coefficient α≊8500 cm−1) is observed at λ≊15 μm for a sheet concentration of 1.6×1012 cm−2/well.Keywords
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