Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16), 1783-1785
- https://doi.org/10.1063/1.105090
Abstract
We report the growth of a new closely lattice‐matched II‐VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x‐ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence‐band offset.Keywords
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