Resonant cavity light-emitting diode

Abstract

A novel concept of a light‐emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light‐emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top‐emitting RCLED structure with AlAs/Al_xGa_1−xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top‐emission intensity is a factor of 1.7 higher as compared to conventional LEDs.