Laser ‘direct writing’ of siliconpnjunctions
- 7 January 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (1), 19-20
- https://doi.org/10.1049/el:19880013
Abstract
Rectifying pn junctions have been deposited by a focused argon laser beam from silane and dopant gases on to oxidised silicon wafers. The characteristics depend on the deposition conditions and on the dopant gas content, but are not those of ideal junctions, probably due to a nonabrupt interface from the present growth parameter values.Keywords
This publication has 3 references indexed in Scilit:
- Laser Assisted Pyrolytic Growth and Photochemical Deposition of Thin Oxide FilmsPublished by Springer Nature ,1984
- Laser-Induced Chemical Vapor DepositionPublished by Springer Nature ,1984
- Wafer-Scale Laser Pantography: IV. Physics of Direct Laser-Writing Micron-Dimension TransistorsMRS Proceedings, 1983