Characterization of SiGe/Si heterostructures formed by Ge+ and C+ implantation
- 26 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (22), 2345-2347
- https://doi.org/10.1063/1.103888
Abstract
Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p‐n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p‐n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics.Keywords
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