Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach
- 15 April 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (8), 2953-2957
- https://doi.org/10.1063/1.336933
Abstract
The Monte Carlo approach is used to study the quasibound electron and hole ground-state levels in a quantum well in the presence of a transverse electric field. A criteria is developed to ensure that the ground state is a true quasibound state. These techniques are applied to an Al0.3Ga0.7As/GaAs quantum well subjected to a high electric field perpendicular to the interfaces. Results on the electron and hole tunneling rates and their dependence on band-edge discontinuities are presented. The variation of the ground-state emission energy with the electric field is also presented.Keywords
This publication has 10 references indexed in Scilit:
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Ground state of positively charged acceptors by the green's function Monte Carlo methodSolid State Communications, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- Analytical theory of crystal growthThe Journal of Chemical Physics, 1976
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970