Composition dependence of the AlxGa1−xSb energy gaps
- 1 September 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (9), 4145-4147
- https://doi.org/10.1063/1.323276
Abstract
Photoresponse measurements were made to determine the compositional dependence of the AlxGa1−xSb direct and indirect energy gaps. Three different valence‐to‐conduction‐band transitions have been identified, with threshold energies of 0.69, 0.77, and 1.11 eV for GaSb, and 1.51, 1.75, and 2 eV for AlSb. The direct conduction‐band minimum is found to be the lowest conduction‐band minimum in the composition range 0?x<0.25.Keywords
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