Ion-implanted structures and doped layers in diamond
- 29 February 1992
- journal article
- review article
- Published by Elsevier in Materials Science Reports
- Vol. 7 (7-8), 275-364
- https://doi.org/10.1016/0920-2307(92)90001-h
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- Residence sites of19F implants in carbon allotropesRadiation Effects and Defects in Solids, 1989
- Fingerprinting diamonds using ion implantationJournal of Materials Science, 1989
- X-Ray diffraction of ion-irradiated diamond, silicon and germaniumRadiation Effects, 1987
- Study of the structural properties of implanted diamonds by EPR and electron diffractionRadiation Effects, 1986
- A diamond opto-electronic switchOptics Communications, 1983
- Mössbauer study of the amorphization process in diamondZeitschrift für Physik B Condensed Matter, 1983
- Defects production and interaction in ion-implanted diamondPhysica B+C, 1983
- Residence sites for111In implanted in diamondHyperfine Interactions, 1981
- In-beam implantation of iron into germanium, silicon and diamond studied by the Mössbauer effectHyperfine Interactions, 1980
- Mössbauer effect and perturbed angular correlation measurements on129mXe implanted in diamondHyperfine Interactions, 1978