P-Type Doping Effects on Band-Gap Energy for Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8A), L1549-1552
- https://doi.org/10.1143/jjap.27.l1549
Abstract
No abstract availableKeywords
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