Monolithic integration of GaAs photoconductors with a field-effect transistor

Abstract

A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ∼3 dB in the FET is also achieved.