Evidence for a primarily nonradiative Si,O defect in GaP
- 1 December 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (12), 5098-5101
- https://doi.org/10.1063/1.1661078
Abstract
Experimental evidence is presented to establish the existence of a Si,O defect impurity system in GaP. This defect is shown to be a strong nonradiative recombination center in n‐type material. A photoluminescence band near 1.55 eV at room temperature has been associated with the Si,O defect.Keywords
This publication has 13 references indexed in Scilit:
- A Photon Counting Apparatus for Kinetic and Spectral MeasurementsReview of Scientific Instruments, 1972
- Electromagnetic Effects in Magnetic InsulatorsJournal of Applied Physics, 1972
- Measurement of the Extrinsic Room-Temperature Minority Carrier Lifetime in GaPJournal of Applied Physics, 1972
- Isoelectronic Trap Li-Li-O in GaPPhysical Review B, 1971
- Spectroscopic Observation of a Vacancy Complex in GaPPhysical Review Letters, 1971
- Efficient green electroluminescent junctions in GaPSolid-State Electronics, 1971
- Optical Properties of n-Type GaAs. III. Relative Band-Edge Recombination Efficiency of Si- and Te-Doped Crystals before and after Heat TreatmentJournal of Applied Physics, 1969
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium PhosphideJournal of Applied Physics, 1968
- Optical Properties of Cd-O and Zn-O Complexes in GaPPhysical Review B, 1968
- Luminescence from GaP containing SiliconJournal of Applied Physics, 1967