Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductors
- 1 January 1979
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 42 (3), 159-168
- https://doi.org/10.1080/00337577908209133
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The accumulation of disorder, subject to saturation and sputter limitation, in ion irradiated solidsRadiation Effects, 1978
- Contribution of strain effects toward the damage measured in semiconductors by channelingRadiation Effects, 1978
- Energy spike generation and quenching processesin ion bombardment induced amorphizationof solidsRadiation Effects, 1978
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975
- Effect of irradiation temperature on Si amorphization processRadiation Effects, 1975
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972