The observation of microvoids in device quality hydrogenated amorphous silicon
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 226-228
- https://doi.org/10.1016/0022-3093(89)90120-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Molecular hydrogen in-Si: HReviews of Modern Physics, 1987
- Hydrogen microstructure in amorphous hydrogenated siliconPhysical Review B, 1987
- Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cellsApplied Physics Letters, 1986
- Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Physical microstructure in device-quality hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1984
- Nature of the structural heterogeneity in SiH films by small angle neutron scatteringSolid State Communications, 1981
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- Small-Angle-Scattering Evidence of Voids in Hydrogenated Amorphous SiliconPhysical Review Letters, 1979
- Amorphous germanium II. Structural propertiesAdvances in Physics, 1973