X-ray determination of dislocation density in epitaxial ZnCdTe
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10), 1066-1068
- https://doi.org/10.1063/1.96381
Abstract
Widths of double-crystal x-ray rocking curves for epitaxial layers of the ternary alloy ZnCdTe are found to correlate with lattice parameter misfit between layer and substrate. Estimates of dislocation density in the layers are made using these widths. Values thus obtained are found to be in good agreement with values reported for other materials with similar misfit.Keywords
This publication has 17 references indexed in Scilit:
- Effect of mismatch strain on band gap in III-V semiconductorsJournal of Applied Physics, 1985
- Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substratesJournal of Vacuum Science & Technology A, 1985
- MBE growth of CdTe, Hg1−xCdxTe, and multilayer structures: Achievements, problems, and prospectsJournal of Vacuum Science & Technology A, 1985
- X-ray zone plates fabricated using electron beam lithography and reactive ion etchingJournal of Vacuum Science & Technology B, 1985
- Growth and properties of Hg1-x Cdx Te epitaxial layersJournal of Electronic Materials, 1982
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBEJournal of Vacuum Science and Technology, 1980
- Oriented growth of semiconductors—II homoepitaxy of gallium arsenideJournal of Physics and Chemistry of Solids, 1966
- X-ray measurements of dislocation density in deformed Copper and Aluminum single crystalsActa Metallurgica, 1961
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949