For low interconnect resistance at the gate level, refractory metal disilicides have been suggested. There are, however, silicide phases with higher metal concentration promising lower electrical resistivity. In this paper, properties of the metal‐rich Mo‐silicide and the disilicide are compared. In particular, stress, resistivity, sensitivity to residual gas conditions during deposition, chemical reactions, and MOS characteristics of gate devices are considered. The applicability of is restricted by its high sensitivity to processing, e.g., to residual gas composition, sintering atmosphere, standard chemicals, and thermal reoxidation. Differences between sputtered and evaporated films are discussed.