High resolution photoemission study on SnO2 gas sensors
- 1 July 2001
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 391 (2), 192-197
- https://doi.org/10.1016/s0040-6090(01)00981-6
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Resonant photoemission characterization of SnOPhysical Review B, 1999
- Competition between initial- and final-state effects in valence- and core-level x-ray photoemission of Sb-dopedPhysical Review B, 1999
- Time-dependent conductance of Pd-dosed SnO2 (110)Surface Science, 1998
- Electronic properties of Cu clusters and islands and their reaction with O $_{\rm 2}$ on SnO $_{\rm 2}$ (110) surfacesThe European Physical Journal D, 1997
- The effect of Pt and Pd surface doping on the response of nanocrystalline tin dioxide gas sensors to COSensors and Actuators B: Chemical, 1996
- The influence of oxygen deficiency and Sb doping on inverse photoemission spectra of SnO2Surface Science, 1993
- Resonant-photoemission study of: Cationic origin of the defect band-gap statesPhysical Review B, 1990
- Conductance response of Pd/SnO2 (110) model gas sensors to H2 and O2Sensors and Actuators B: Chemical, 1990
- Factor analysis and superposition of Auger electron spectra applied to room temperature oxidation of Ni and NiCr21Fe12Surface and Interface Analysis, 1989
- Oxygen deficient SnO2 (110) and TiO2 (110): A comparative study by photoemissionSolid State Communications, 1986