Minority-carrier mobility in p-type GaAs
- 1 July 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7), 5040-5042
- https://doi.org/10.1063/1.325602
Abstract
Theoretical calculations of electron mobility in p‐type GaAs were carried out taking into consideration the screening effects and all major scattering processes. Calculated values of mobility are presented as a function of carrier concentration, compensation ratio, and temperature. The basic differences between minority‐carrier mobility in p‐type GaAs and electron mobility in n‐type GaAs are pointed out. A practical procedure is also presented for the evaluation of minority‐carrier mobility from available electron‐mobility data.Keywords
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