Metal-insulator transition in doped semiconductors
- 1 December 1980
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 42 (6), 845-858
- https://doi.org/10.1080/01418638008222332
Abstract
The positions and properties of the upper Hubbard band are discussed. The Wigner–Seitz method is used to discuss its position. The metal–insulator transition is represented as an overlap between the two bands; it is shown that this model is compatible with observations of the thermopower. An attempt is made to interpret the transition for highly compensated samples. Hopping conduction is discussed, together with the effect of intersite Coulomb interactions.Keywords
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