Single-crystal Si islands on SiO2 obtained via excimer-laser irradiation of a patterned Si film

Abstract

We have developed a single‐pulse based excimer‐laser crystallization technique that transforms photolithographically patterned and SiO₂‐encapsulated a‐Si regions into single‐crystal islands on SiO₂. The method utilizes the substantial superlateral growth distances that are attainable at high substrate temperatures in combination with precise manipulation of the evolution of the solidification front in order to allow only one of the several grains that originate from the intentionally incompletely melted (i.e., the seed) portion of an island to pass through a constriction and propagate into the rest of the island. This converts the main portion of the island, which extends tens of microns in the lateral dimensions, into a high‐angle‐grain boundary free crystalline material, in so far as the size of the island is commensurate with achievable superlateral growth distances.