Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2R), 269
- https://doi.org/10.1143/jjap.27.269
Abstract
A double hetero (DH) GaAs tunnel diode which consists of a GaAs tunnel junction sandwiched between AlxGa1-xAs layers has been grown by molecular beam epitaxy, and its annealing characteristics studied. DH tunnel diodes have the advantage that a decrease in the tunnel peak current density due to annealing is greatly suppressed compared to conventional GaAs diodes without AlGaAs layers. In-depth profiles of dopants indicate that the AlGaAs layers act as blocking layers against Be diffusion, which causes a degradation of the diodes. An Al0.4Ga0.6As/GaAs tandem solar cell incorporating the DH tunnel junction as interconnectors has achieved a conversion efficiency of 20%.Keywords
This publication has 6 references indexed in Scilit:
- A stability criterion for tunnel diode interconnect junctions in cascade solar cellsSolar Cells, 1985
- Al0.2Ga0.8As p+-n junction solar cells grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxyJournal of Applied Physics, 1985
- (GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cellsSolar Cells, 1984
- Integrated multilayer GaAs lasers separated by tunnel junctionsApplied Physics Letters, 1982
- GaAs-AlGaAs tunnel junctions for multigap cascade solar cellsJournal of Applied Physics, 1982