Effect of substrate temperature and deposition rate on the photoconductivity of sputtered a-Si : H
Open Access
- 1 January 1980
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 41 (20), 483-486
- https://doi.org/10.1051/jphyslet:019800041020048300
Abstract
The variation of the photoconductivity versus photon energy is reported for samples deposited at 150 °C, 190 °C and 250 °C at low (30 Å/min.) and high (∼ 150 Å/min.) deposition rates. The spin densities of the same samples are also reported. Taking into account the hydrogen concentration and distribution in these samples, a model according to the photoconductivity is mainly limited by the density and depth of shallow traps originating from hydrogen independent matrix defects is proposedKeywords
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