A pulsed interface-probing technique for MOS interface characterization at mid-gap levels
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12), 2391-2396
- https://doi.org/10.1109/16.8820
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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