Minority-carrier lifetime in doped and undoped n-type CdxHg1−xTe
- 1 October 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7), 2377-2385
- https://doi.org/10.1063/1.337149
Abstract
Measurements of minority‐carrier lifetime have been carried out on slices of n‐type CdxHg1−xTe (0.2<xxHg1−xTe.Keywords
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