Influence of Oxide Layers on the Determination of the Optical Properties of Silicon
- 1 June 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6), 2835-2839
- https://doi.org/10.1063/1.1661603
Abstract
Experimental reflectance data for silicon are corrected for the presence of a surface oxide layer and analyzed using the Kramers‐Kronig relation to yield a set of optical constants for oxide‐free silicon. For etched silicon samples exposed to the atmosphere for ∼ 1 h, this layer is 12–15 Å thick and has the approximate composition SiO. Absorption data are also given for epitaxial silicon on spinel and used as an aid in the analysis.Keywords
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