On the Forward V-I Characteristics of the GaAs Laser Diode
- 1 April 1964
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 3 (4)
- https://doi.org/10.1143/jjap.3.233
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Room temperature operation of gallium arsenide lasersPhysics Letters, 1963
- QUANTUM EFFICIENCY OF GaAs INJECTION LASERSApplied Physics Letters, 1963
- Transistor-like device using optical coupling between diffused p-n junctions in GaAsProceedings of the IEEE, 1963