Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films
- 1 January 1992
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 6 (1-3), 257-261
- https://doi.org/10.1016/0925-4005(92)80065-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Oxygen sensing with long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1991
- Gallium oxide thin films: A new material for high-temperature oxygen sensorsSensors and Actuators B: Chemical, 1991
- Scanning tunneling microscopy investigations of platinum-covered Ga2O3 thin-film supported catalystsSurface Science, 1991
- Stability of semiconducting gallium oxide thin filmsThin Solid Films, 1990
- Antimony-doped stannic oxide-based thick-film gas sensorsSensors and Actuators, 1987
- The effect of oxygen on the electrical conductivity of some metal oxides in inert and reducing atmospheres at high temperatureSensors and Actuators, 1985
- Electrical properties of β-Ga2O3 single crystalsSolid State Communications, 1976
- Growth of β‐Ga2, O3 by the Verneuil TechniqueJournal of the American Ceramic Society, 1964
- Crystal Structure of β-Ga2O3The Journal of Chemical Physics, 1960
- Polymorphism of Ga2O3 and the System Ga2O3—H2OJournal of the American Chemical Society, 1952