Electronic structure of Ge in SiO2
- 10 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (25), 4957-4962
- https://doi.org/10.1088/0022-3719/18/25/014
Abstract
It is argued that one-electron theory is insufficient to account for the origin of the observed spectra of Ge in SiO2 ( alpha -quartz) crystals. A simple model is employed to show that impurity states responsible for ESR spectra of SiO2:Ge are stabilised by many-electron polarisation effects associated with the Ge atom itself and its immediate oxygen neighbours.Keywords
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