Single-Crystal Silicon on Spinel

Abstract

Evidence is given which shows that silicon epitaxy has been achieved on the commercially available magnesia aluminate spinel by the pyrolysis of silane and reduction of SiCl₄ in an atmosphere of hydrogen. Epitaxy as indicated by physical characteristics within the film as viewed optically has been confirmed with x‐ray data. The principal limitation to film quality appears to be the substrate quality. The epitaxial mechanism seems to be the same as postulated for the silicon sapphire system, i.e., a substitution of silicon for the metal ion, in this case filling a Mg⁺² site and bonding to the oxygen atoms of the spinel. The following orientation relationships were obtained: (111)Si∥(111) spinel; (100)Si∥(100) spinel; and (110)Si∥(110) spinel.