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Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy
Home
Publications
Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy
Preparation of semiconductor devices by ionized-cluster beam deposition and epitaxy
TT
T. Takagi
T. Takagi
IY
I. Yamada
I. Yamada
AS
A. Sasaki
A. Sasaki
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1 January 1976
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1976.189117
Abstract
No abstract available
Keywords
VAN DER WAALS FORCE
OHMIC CONTACT
SEMICONDUCTOR DEVICES
THIN FILM
ELECTRONS
ACCELERATION
EPITAXIAL GROWTH
FABRICATION
Cited by 2 articles