Refractory metal silicides for self-aligned gate modulation doped n+-(Al,Ga)As/GaAs field-effect transistor integrated circuits
- 1 November 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (6), 1680-1684
- https://doi.org/10.1116/1.582961