Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment
- 1 August 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 268 (3-4), 359-363
- https://doi.org/10.1016/j.jcrysgro.2004.04.054
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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