Zn-diffused back-illuminated p-i-n photodiodes in InGaAs/InP grown by molecular-beam epitaxy
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8), 730-731
- https://doi.org/10.1063/1.92061
Abstract
Epitaxial films of In0.53Ga0.47As lattice‐matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×1015 cm−3. High‐speed back‐illuminated PIN photodiodes for use at 0.95–1.6 μm wavelength were made from the resulting layers.Keywords
This publication has 5 references indexed in Scilit:
- Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelengthElectronics Letters, 1980
- In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systemsElectronics Letters, 1979
- Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1978
- Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBEApplied Physics Letters, 1978
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975