Ferromagnetic Resonance in Si-Doped YIG

Abstract
Ferromagnetic resonance at 10 and 30 GHz has been observed in magnetically annealed Si-doped YIG from 4.2°–400°K for all orientations θ. (measured from a [100] direction) in the [110] plane. The results are analyzed quantitatively making use of a doublet orbital ground state for the ferrous ions. The anisotropy in the line width peak at 360°K due to electron hopping has been calculated to be ΔH100/ΔH111 ≈ 3 in agreement with the experiment. Although g varies between 1.96–2.00, the orientation-averaged field for resonance is as much as 2000g below ω/γ in our samples down to 50°K. This is not due to a relaxation mechanism as suggested previously, but is caused by the redistribution of the electrons as the static field is rotated. The temperature dependence of the resonance field leads to | λ | = 90 cm−1. Below 50°K the distribution remains essentially fixed for short periods of time. By quickly measuring at 4.2°K the resonance field as a function of θ for the anneal field in either the [100], [111], or [110] directions, vastly different curves are traced which show peaks in the [110] and θ = 35° directions. These peaks are predicted by the model for the Fe2+ ion. The peak fields are still slightly below the g = 2 value. This can be explained quantitatively by a canting of about 10° of the ferrous ion spins near the energy level crossing giving rise to a localized spin disturbance of the host lattice.