Thermal noise limitations to 2×20-μm2 magnetoresistive memory element thresholds
- 15 April 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8), 3151-3152
- https://doi.org/10.1063/1.340872
Abstract
The effect of thermal agitation on the abruptness of the switching threshold for transverse magnetoresistive memory elements was examined. When the switching fields were within 1% or 2% of the threshold, thermal effects were observed.Keywords
This publication has 2 references indexed in Scilit:
- Threshold properties of 1, 2 and 4 µm multilayer magneto-resistive memory cellsIEEE Transactions on Magnetics, 1987
- 0.075, 1.25 and 2.0 μm wide M-R transducersJournal of Magnetism and Magnetic Materials, 1986