Optimization of stripe width for low-threshold operation of quantum well laser diodes
- 18 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (25), 2487-2489
- https://doi.org/10.1063/1.102887
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity-induced disorderingApplied Physics Letters, 1989
- Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substratesIEEE Journal of Quantum Electronics, 1989
- Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold currentIEEE Journal of Quantum Electronics, 1989
- Ultimate limit in low threshold quantum well GaAlAs semiconductor lasersApplied Physics Letters, 1988
- Low-Threshold Patterned quantum well lasers grown by molecular beam epitaxyElectronics Letters, 1988
- Enhanced throughput in packet radio channels with shadowingElectronics Letters, 1988
- The band-band Auger effect in semiconductorsSolid-State Electronics, 1987
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Threshold currents for AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1984
- Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection LaserJapanese Journal of Applied Physics, 1980