Birefringence Caused by Edge Dislocations in Silicon

Abstract

A calculation is given of the intensity distribution in a beam of plane polarized or circularly polarized infrared light after transmission through a crystal of silicon containing a single-edge dislocation or a simple tilt boundary. It is apparent that care must be taken to differentiate between an edge dislocation and the region around the extremum of an inclusion, since both give similar intensity contours, the only difference being one of absolute magnitude.