Optical characterization of pure ZnSe films grown on GaAs

Abstract

We report the first spectroscopic ellipsometry study of the E₀, E₀+Δ₀, E₁, and E₁+Δ₁ critical points in high‐quality ZnSe films. These data seem to be the best identification of E₁ and E₁+Δ₁ peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X‐ray photoelectron spectroscopy data after NH₄OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.