Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells
- 13 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2), 86-88
- https://doi.org/10.1063/1.98605
Abstract
Near‐band‐gap optical nonlinearity in In0.53Ga0.47As/InP multiple quantum well (MQW) structures is studied by a combination of nonlinear absorption, pump‐and‐probe, and forward degenerate four‐wave mixing experiments. Near complete saturation of the n=1 heavy‐hole exciton is observed for the first time in In0.53Ga0.47As/InP MQW structures. Nonlinear susceptibility χ(3) is found to be 0.08 esu, which is about the same as that for GaAs/GaAlAs MQW structures. Saturation intensity is 200 W/cm2.Keywords
This publication has 11 references indexed in Scilit:
- 1.55-μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wellsApplied Physics Letters, 1987
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structuresApplied Physics Letters, 1986
- Picosecond study of near-band-gap nonlinearities in GaInAsPJournal of Applied Physics, 1986
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Resonant degenerate four-wave mixing in GaAs multiquantum well structuresApplied Physics Letters, 1982
- Saturation of the free exciton resonance in GaAsSolid State Communications, 1979
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974