Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach
- 7 May 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (19), 2902-2904
- https://doi.org/10.1063/1.1370537
Abstract
In this letter, we present a microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices. In particular, a global Monte Carlo simulation scheme is proposed in order to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between intercarrier thermalization and phonon-assisted relaxation in quantum-cascade lasers is investigated and their relative importance on device performance is clearly identified.Keywords
This publication has 9 references indexed in Scilit:
- Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasersApplied Physics Letters, 2000
- The nature of the electron distribution functions in quantum cascade lasersApplied Physics Letters, 1999
- Bidirectional Semiconductor LaserScience, 1999
- Microscopic theory of vertical-transport phenomena in semiconductor heterostructures: Interplay between two- and three-dimensional hot-carrier relaxationPhysical Review B, 1999
- GaAs/Al x Ga 1−x As quantum cascade lasersApplied Physics Letters, 1998
- Silicon-based interminiband infrared laserJournal of Applied Physics, 1998
- High-Power Infrared (8-Micrometer Wavelength) Superlattice LasersScience, 1997
- Theory of gain spectra for quantum cascade lasers and temperature dependence of their characteristics at low and moderate carrier concentrationsIEEE Journal of Quantum Electronics, 1996
- Quantum Cascade LaserScience, 1994