Dislocations in Webs of Germanium and Silicon

Abstract

The generation of dislocations in webs of germanium or silicon is discussed. In silicon many of these dislocations intersect the web solid‐liquid interface and are propagated during growth; they frequently align themselves into low‐angle grain boundaries which tend to lie in the (01̄1) plane and propagate in the [21̄1̄] crystal‐growth direction. The dislocations also interact strongly with the twin planes in the web and with each other. The effects of these interactions are made visible by the peculiar etching characteristics of the dislocations involved.