Gain studies of electron beam excited XeF laser mixtures
- 1 September 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (9), 945-948
- https://doi.org/10.1109/jqe.1980.1070596
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- XeF laser characteristics studied at elevated temperaturesJournal of Applied Physics, 1980
- Laser gain measurements by means of amplified spontaneous emissionApplied Optics, 1980
- Theoretical study of the deexcitation of KrF and XeF excimers by low-energy electronsApplied Physics Letters, 1979
- Temperature-dependent absorption processes in the XeF laserApplied Physics Letters, 1979
- A new electron-beam pumped XeF laser at 486 nmApplied Physics Letters, 1979
- Measurement of gain on the XeF (C-A) blue-green bandApplied Physics Letters, 1979
- Versatile high-temperature high-pressure vapor cell design for electron beam excited laser studiesApplied Optics, 1978
- Absorption in Ne- and Ar-rich XeF* laser mixturesApplied Physics Letters, 1978
- Gain and fluorescence measurements in photoionization-stabilized XeF discharge lasers operating at high-energy loadingsApplied Physics Letters, 1977
- 1-μs laser pulses from XeFApplied Physics Letters, 1977