Localized states in the presence of a phosphorus vacancy in GaP
- 1 January 1977
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 38 (12), 1399-1401
- https://doi.org/10.1016/0022-3697(77)90015-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Deep-level controlled lifetime and luminescence efficiency in GaPApplied Physics Letters, 1975
- Recombination processes associated with “Deep states” in gallium phosphideJournal of Luminescence, 1970