Alternating-Current Method for Separating the Contact Influence from Bulk Properties of Semiconductors

Abstract

An ac test method is described which allows separation of contact influences from the bulk resistance of semiconductors and the measurement of their properties simultaneously. As an example, this method is applied to thin CdS films with different metal electrodes. Examples are given for the light and voltage dependence of both bulk and contact resistance, the true rise and decay curves, and the separation of changes in contact and bulk resistance with time or by post deposition treatments.