Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration factor, respectively. We also report on the TDDB characteristics of thin SiO/sub 2/ films at temperatures as high as 400/spl deg/C and demonstrate the use of these temperatures to accelerate TDDB.Keywords
This publication has 12 references indexed in Scilit:
- Polarity dependence of thin oxide wearoutPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Statistical modeling of silicon dioxide reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Temperature acceleration of time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1989
- Time Dependent Dielectric Breakdown of 210A Oxides8th Reliability Physics Symposium, 1989
- A numerical analysis for the small-signal response of the MOS capacitorSolid-State Electronics, 1989
- The dielectric reliability of intrinsic thin SiO2films thermally grown on a heavily doped Si substrate—characterization and modelingIEEE Transactions on Electron Devices, 1987
- Acceleration Factors for Thin Gate Oxide Stressing8th Reliability Physics Symposium, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Time-Zero Dielectric Reliability Test by a Ramp Method8th Reliability Physics Symposium, 1981