Critical angles of Sb and Bi implanted Si
- 16 August 1971
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 36 (2), 81-82
- https://doi.org/10.1016/0375-9601(71)90755-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The use of channeling-effect techniques to locate interstitial foreign atoms in siliconRadiation Effects, 1971
- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- Anomalously high yields of elastically scattered12C-ions from Zr, Hf, Tl, and Hg atoms implanted into siliconRadiation Effects, 1970
- Lattice location of heavy group III and V elements implanted into GeRadiation Effects, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967