Critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices
- 15 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (6), 3043-3050
- https://doi.org/10.1063/1.341568
Abstract
A model, based on energy considerations, to determine the critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices is introduced. Comparison with experiments shows a good agreement between the theory and experiment. It is also shown that in films which are initially dislocation-free, the energy barrier for the nucleation of dislocation loops can be crossed by thermal activation if the film is thicker than the critical value provided by the model.Keywords
This publication has 22 references indexed in Scilit:
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- New approach to the high quality epitaxial growth of lattice-mismatched materialsApplied Physics Letters, 1986
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substratesThin Solid Films, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972
- Direct observation of dislocations due to epitaxyPhilosophical Magazine, 1961
- The observation of dislocations to accommodate the misfit between crystals with different lattice parametersPhilosophical Magazine, 1961
- Screw dislocations and discrete elastic theoryJournal of Physics and Chemistry of Solids, 1959
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949