SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS
- 15 May 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (10), 291-293
- https://doi.org/10.1063/1.1754816
Abstract
Ion transport in the oxide film of a metal‐oxide‐silicon (MOS) structure is examined. Space‐charge‐limited ionic current transients are observed, including the well known Many‐Mark‐Helfrich ``cusp.'' It is shown that precautions must be taken to ensure that interface trapping of the ions does not dominate and suppress the SCL currents.Keywords
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