The behaviour of point defect clusters in irradiated metals

Abstract

A simple model, where clusters of interstitial atoms compete with the equivalent number of vacancies left in the crystal for subsequent interstitial atoms, is used to discuss the rate of accumulation of the vacancies and the conditions governing the size of the interstitial atom clusters. Recombination becomes important at an interstitial cluster size which is dependent upon the relative interaction distances of interstitial atoms with vacancies and dislocation lines.